Channel TypeN

Collector Current54 A

Collector to Emitter Shorted Voltage600 V

Collector to Emitter Voltage600 V

ConfigurationArray

Continuous Collector Current54 A

Dimensions40.5 x 28 x 12 mm

Energy Rating1.8 mJ

Gate Capacitance3.2 nF

Gate to Emitter Voltage±20 V

Height0.472" (12mm)

Length1.594" (40.5mm)

Maximum Operating Temperature+150 °C

Minimum Operating Temperature-40 °C

Mounting TypeThrough Hole

Number of Pins8

Package TypeT-32

PolarityN-Channel

Primary TypeSi

Product HeaderN-Channel IGBT Module

SeriesIGBT Series

Temperature Operating Range-40 to +150 °C

Transistor TypeIGBT

TypeUltrafast

Width1.102" (28mm)